Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm

被引：53

作者：

Shatalov, M ^{[1
]}

Chitnis, A

Mandavilli, V

Pachipulusu, R

Zhang, JP

Adivarahan, V

Wu, S

Simin, G

Khan, MA

Tamulaitis, G

Sereika, A

Yilmaz, I

Shur, MS

Gaska, R

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] Rensselaer Polytech Inst, Dept ECSE, Troy, NY 12180 USA

[3] Rensselaer Polytech Inst, CIEEM, Troy, NY 12180 USA

[4] Sensor Elect Technol Inc, Latham, NY 12110 USA

[5] Vilnius State Univ, IMSAR, Vilnius, Lithuania

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 02期

关键词：

D O I：

10.1063/1.1536729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a study on the time evolution of the electroluminescence (EL) spectra of AlGaN-based deep ultraviolet light-emitting diodes (LEDs) under pulsed current pumping. The EL spectra peaks at 285 nm and 330 nm are found to result from recombination involving band-to-band and free carriers to deep acceptor level transitions. The 330 nm long-wavelength transitions to deep acceptor levels in the p-AlGaN layer as well as the nonradiative processes significantly influence the LED internal quantum efficiency. (C) 2003 American Institute of Physics.

引用

页码：167 / 169

页数：3

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