Electronic states of thin epitaxial layers of Ge on Si(100)

被引:3
作者
Di Gaspare, L [1 ]
Capellini, G [1 ]
Cianci, E [1 ]
Evangelisti, F [1 ]
机构
[1] Univ Roma 3, Dipartimento Fis E Amaldi, I-00146 Rome, Italy
关键词
photoemission spectroscopies; valence band offset; chemical vapor deposition; strained heterojunctions;
D O I
10.1016/S0169-4332(97)00557-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The valence density of states of Ge grown epitaxially on Si(100) is investigated as a function of thickness by yield spectroscopy and photoemission techniques. A double edge is present in the yield data for thicknesses smaller than the lattice relaxation critical thickness. Furthermore, the line-up of the Ge states to the Si valence band varies with overlayer thickness. Photoemission techniques fail to detect this behavior. The causes for the discrepancy are analyzed. (C) 1998 Elsevier Science B.V.
引用
收藏
页码:738 / 741
页数:4
相关论文
共 8 条
[1]   Low-energy yield spectroscopy determination of band offsets: Application to the epitaxial Ge/Si(100) heterostructure [J].
DiGaspare, L ;
Capellini, G ;
Chudoba, C ;
Sebastiani, M ;
Evangelisti, F .
APPLIED SURFACE SCIENCE, 1996, 104 :595-600
[2]   Ge/Si(100) heterostructures: A photoemission and low-energy yield spectroscopy investigation [J].
DiGaspare, L ;
Capellini, G ;
Sebastiani, M ;
Chudoba, C ;
Evangelisti, F .
APPLIED SURFACE SCIENCE, 1996, 102 :94-97
[3]  
DIGASPARE L, UNPUB J VAC SCI TE B
[4]   NATURE OF THE BAND DISCONTINUITIES AT SEMICONDUCTOR HETEROJUNCTION INTERFACES [J].
MARGARITONDO, G ;
KATNANI, AD ;
STOFFEL, NG ;
DANIELS, RR ;
ZHAO, TX .
SOLID STATE COMMUNICATIONS, 1982, 43 (03) :163-166
[5]   HETEROJUNCTION BAND LINEUPS IN SI-GE ALLOYS USING SPATIALLY RESOLVED ELECTRON-ENERGY-LOSS SPECTROSCOPY [J].
MORAR, JF ;
BATSON, PE ;
TERSOFF, J .
PHYSICAL REVIEW B, 1993, 47 (07) :4107-4110
[6]   CORE-LEVEL PHOTOEMISSION MEASUREMENTS OF VALENCE-BAND OFFSETS IN HIGHLY STRAINED HETEROJUNCTIONS - SI-GE SYSTEM [J].
SCHWARTZ, GP ;
HYBERTSEN, MS ;
BEVK, J ;
NUZZO, RG ;
MANNAERTS, JP ;
GUALTIERI, GJ .
PHYSICAL REVIEW B, 1989, 39 (02) :1235-1241
[7]   LOW-ENERGY YIELD SPECTROSCOPY AS A NOVEL TECHNIQUE FOR DETERMINING BAND OFFSETS - APPLICATION TO THE C-SI(100)/ALPHA-SI-H HETEROSTRUCTURE [J].
SEBASTIANI, M ;
DIGASPARE, L ;
CAPELLINI, G ;
BITTENCOURT, C ;
EVANGELISTI, F .
PHYSICAL REVIEW LETTERS, 1995, 75 (18) :3352-3355
[8]   MEASUREMENT OF THE VALENCE BAND OFFSET IN NOVEL HETEROJUNCTION SYSTEMS - SI GE (100) AND ALSB ZNTE (100) [J].
YU, ET ;
CROKE, ET ;
CHOW, DH ;
COLLINS, DA ;
PHILLIPS, MC ;
MCGILL, TC ;
MCCALDIN, JO ;
MILES, RH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :908-915