Quantum dot amplifiers with high output power and low noise

被引：69

作者：

Berg, TW ^{[1
]}

Mork, J ^{[1
]}

机构：

[1] Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 18期

关键词：

D O I：

10.1063/1.1571226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantum dot semiconductor optical amplifiers have been theoretically investigated and are predicted to achieve high saturated output power, large gain, and low noise figure. We discuss the device dynamics and, in particular, show that the presence of highly inverted barrier states does not limit the performance of these devices. (C) 2003 American Institute of Physics.

引用

页码：3083 / 3085

页数：3

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