A 3-V, 0.35-μm CMOS bluetooth receiver IC

被引：56

作者：

Sheng, WJ ^{[1
]}

Xia, B ^{[1
]}

Emira, AE ^{[1
]}

Xin, CY ^{[1
]}

Valero-López, AY ^{[1
]}

Moon, ST ^{[1
]}

Sánchez-Sinencio, E ^{[1
]}

机构：

[1] Texas A&M Univ, Analog & Mixed Signal Ctr, Dept Elect Engn, College Stn, TX 77843 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2003年 / 38卷 / 01期

关键词：

active complex filter; CMOS integrated circuits; GFSK demodulator; low-IF receiver; radio receivers;

D O I：

10.1109/JSSC.2002.806277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated CMOS low-IF Bluetooth receiver is presented. The receiver consists of a radio frequency (RF) front end, a phase-locked loop (PLL), an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, and a frequency offset cancellation circuit. The highlights of the receiver include a low-power active complex filter with a nonconventional tuning scheme and a high-performance mixed-mode GFSK demodulator. The chip was fabricated on a 6.25-mm(2) die using TSMC 0.35-mum standard CMOS process. -82 dBm sensitivity at 1e-3 bit error rate, -10 dBm IIP3, and 15 dB noise figure were achieved in the measurements. The receiver active current is about 65 mA from a 3-V power supply.

引用

页码：30 / 42

页数：13

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