Radiative recombination efficiency of InGaN-based light-emitting diodes evaluated at various temperatures and injection currents

被引：11

作者：

Masui, Hisashi ^{[1
]}

Sato, Hitoshi ^{[1
]}

Asamizu, Hirokuni ^{[1
]}

Schmidt, Mathew C. ^{[1
]}

Fellows, Natalie N. ^{[1
]}

Nakamura, Shuji ^{[1
]}

DenBaars, Steven P. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Coll Engn, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 25-28期

关键词：

light-emitting diode; nitride semiconductors; electroluminescence; low-temperature characteristics;

D O I：

10.1143/JJAP.46.L627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The present article discusses the radiative recombination efficiency in electroluminescence of InGaN-based light-emitting diodes prepared on sapphire substrates. The radiative efficiency was studied over a temperature and injection-current range on three samples with different optical performance. The efficiency generally improved as temperature was lowered or current was increased, however, reduced under low-temperature and high-current conditions on high-quality samples. Our model took electron overflow and kinetic carrier generation into account to explain the reduced efficiency, and a calculation based on the model reasonably reproduced the efficiency reduction. The near-UV emission often observed at low temperature was qualitatively explained by the model.

引用

页码：L627 / L629

页数：3

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