Factors affecting resolution in scanning electron beam induced patterning of surface adsorption layers

被引:12
作者
Hui, FYC
Eres, G
Joy, DC
机构
[1] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
[2] Univ Tennessee, Knoxville, TN 37996 USA
关键词
D O I
10.1063/1.120730
中图分类号
O59 [应用物理学];
学科分类号
摘要
The monoatomic hydride layer on silicon was used as a prototype for resistless electron beam lithography. Arbitrary patterns with linewidths below 60 nm have been achieved. The variation of the linewidth with electron energy, electron dose, and substrate thickness was studied to determine the mechanisms that govern surface hydrogen desorption and subsequent pattern formation. Unlike in resist based lithography, no resolution enhancement was observed with decreasing substrate thickness. The experimental data in combination with Monte Carlo simulations of the backscattered and transmitted electrons suggest that surface hydrogen desorption and pattern formation are not strongly related to the backscattered electrons and the secondary electrons (energies < 50 eV) associated with the backscattered electrons. (C) 1998 American Institute of Physics.
引用
收藏
页码:341 / 343
页数:3
相关论文
共 14 条
[1]   Nanometer-scale lithography on Si(001) using adsorbed H as an atomic layer resist [J].
Adams, DP ;
Mayer, TM ;
Swartzentruber, BS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :1642-1649
[2]   ELECTRON-BEAM FABRICATION OF 80-A METAL STRUCTURES [J].
BROERS, AN ;
MOLZEN, WW ;
CUOMO, JJ ;
WITTELS, ND .
APPLIED PHYSICS LETTERS, 1976, 29 (09) :596-598
[3]   High voltage electron beam nanolithography on WO3 [J].
Carcenac, F ;
Vieu, C ;
HaghiriGosnet, AM ;
Simon, G ;
Mejias, M ;
Launois, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :4283-4287
[4]   SCANNING TUNNELING MICROSCOPE STIMULATED OXIDATION OF SILICON (100) SURFACES [J].
FAY, P ;
BROCKENBROUGH, RT ;
ABELN, G ;
SCOTT, P ;
AGARWALA, S ;
ADESIDA, I ;
LYDING, JW .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) :7545-7549
[5]  
GOLDSTEIN JI, 1992, SCANNING ELECT MICRO, P88
[6]  
Hui FYC, 1997, MAT RES S C, V448, P57
[7]  
Joy D.C., 1995, MONTE CARLO MODELING
[8]  
KALCEFF MAS, 1995, J APPL PHYS, V77, P4125, DOI 10.1063/1.359499
[9]   NANOSCALE PATTERNING AND OXIDATION OF H-PASSIVATED SI(100)-2X1 SURFACES WITH AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE [J].
LYDING, JW ;
SHEN, TC ;
HUBACEK, JS ;
TUCKER, JR ;
ABELN, GC .
APPLIED PHYSICS LETTERS, 1994, 64 (15) :2010-2012
[10]   NANOMETER-SCALE PATTERNING AND OXIDATION OF SILICON SURFACES WITH AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE [J].
LYDING, JW ;
ABELN, GC ;
SHEN, TC ;
WANG, C ;
TUCKER, JR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06) :3735-3740