Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides

被引：6

作者：

Gueorguiev, VK

Ivanov, TE

Dimitriadis, CA

Andreev, SK

Popova, LI

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria

[2] Univ Thessaloniki, Dept Phys, GR-54006 Salonika, Greece

来源：

MICROELECTRONICS JOURNAL | 2000年 / 31卷 / 08期

关键词：

silicon dioxide-polysilicon interface; thin films; reliability; time-to-breakdown;

D O I：

10.1016/S0026-2692(00)00043-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time-to-breakdown (t(bd)) of polysilicon/polyoxide/polysilicon structures is investigated on small and large area capacitors. The ln(t(bd)) versus 1/E-ox projection lines are corrected by using an average oxide field enhancement factor for the interface polysilicon/thermally grown polyoxide. A field acceleration factor G approximate to 320 MV/cm in the time-to-breakdown projection line is obtained. It is shown that the fast prediction of time-to-breakdown can be achieved with short stress time measurements in structures of different area. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

收藏

页码：663 / 666

页数：4

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