Control of the polarity of GaN films using an Mg adsorption layer

被引：34

作者：

Grandjean, N ^{[1
]}

Dussaigne, A ^{[1
]}

Pezzagna, S ^{[1
]}

Vennéguès, P ^{[1
]}

机构：

[1] CNRS, CRHEA, SPM, F-06560 Valbonne, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

interfaces; reflection high energy electron diffractions; molecular beam epitaxy; gallium nitride;

D O I：

10.1016/S0022-0248(02)02361-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The polarity of GaN epilayers grown by molecular beam epitaxy is controlled using Mg. This is achieved by simultaneously exposing the surface to Mg and NH3 fluxes during growth interruption. Reflection high-energy electron diffraction (RHEED) indicates the formation of a Mg3N2, layer. Overgrowing GaN on this surface leads to a polarity inversion either from Ga to N or N to Ga. The change of the polarity is followed in situ by RHEED via surface reconstructions of the GaN surface. The polarity inversion is further confirmed by convergent beam electron diffraction experiments. Finally, high-resolution transmission electron microscopy images show different interface morphologies between Ga/N and N/Ga polarity boundaries. The control of the GaN polarity opens the way for novel periodic polarity structures dedicated to non-linear optics. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：460 / 464

页数：5

共 8 条

[1] MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy [J].