Energy conversion efficiency in nanotube optoelectronics

被引：51

作者：

Stewart, DA ^{[1
]}

Léonard, F ^{[1
]}

机构：

[1] Sandia Natl Labs, Livermore, CA 94551 USA

来源：

NANO LETTERS | 2005年 / 5卷 / 02期

关键词：

D O I：

10.1021/nl048410z

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present theoretical performance estimates for nanotube optoelectronic devices under bias. Current-voltage characteristics of illuminated nanotube p-n junctions are calculated using a self-consistent nonequilibrium Green's function approach. Energy conversion rates reaching tens of percent are predicted for incident photon energies near the band gap energy. In addition, the energy conversion rate increases as the diameter of the nanotube is reduced, even though the quantum efficiency shows little dependence on nanotube radius. These results indicate that the quantum efficiency is not a limiting factor for use of nanotubes in optoelectronics.

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页码：219 / 222

页数：4

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