Superpolishing for planarizing copper damascene interconnects

被引:29
作者
Chang, SC
Shieh, JM [1 ]
Dai, BT
Feng, MS
Li, YH
Shih, CH
Tsai, MH
Shue, SL
Liang, RS
Wang, YL
机构
[1] Natl Chiao Tung Univ, Inst Mat Sci & Engn, Hsinchu 30050, Taiwan
[2] Natl Nano Device Labs, Hsinchu 30050, Taiwan
[3] Merck Kanto Adv Chem Ltd, Taipei, Taiwan
[4] Taiwan Semicond Mfg Co, Hsinchu, Taiwan
关键词
D O I
10.1149/1.1565853
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We demonstrate a superpolishing electrolyte, which consists of acid additives in conventional Cu polishing electrolytes (H3PO4), for efficiently planarizing Cu damascene features. The significant additive concentration gradient in features, resulting in a selective Cu dissolution rate within features, is explored as a major mechanism that yields such electrolytes with high planarization efficiency. Moreover, another additive, polyethylene glycol as a suppressor, is also employed to reduce oxygen bubbling on polished films. Consequently, a smooth surface with a complete step height elimination is obtained in a 70 mm trench after electropolishing. (C) 2003 The Electrochemical Society.
引用
收藏
页码:G72 / G74
页数:3
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