InAs quantum dots over InGaAs for infrared photodetectors

被引：12

作者：

Pires, MP

Landi, SM

Tribuzy, CVB

Nunes, LA

Marega, E

Souza, PL

机构：

[1] Pontificia Univ Catolica Rio de Janeiro, Ctr Estudos & Telecommun, Semicond Lab, BR-22453 Rio De Janeiro, Brazil

[2] Univ Fed Sao Carlos, Inst Fis, BR-13560 Sao Carlos, SP, Brazil

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 272卷 / 1-4期

关键词：

growth conditions; MOCVD; quantum dots; III-V semiconductors; DWELL; photodetectors; QDIP;

D O I：

10.1016/j.jcrysgro.2004.08.105

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Self-assembled InAs quantum dots (QD) over an InGaAs layer on InP substrates were grown by metal-organic chemical vapor deposition (MOCVD). Their structural and optical properties were investigated by atomic force microscopy (AFM) and photoluminescence (PL). We have studied the effect of QD deposition time, its growth temperature and InGaAs mismatch on the dots density, height, homogeneity and PL spectra. Optimized stacks of structures were grown for a QD infrared photodetector (QDIP) and their absorption was measured. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：192 / 197

页数：6

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