InAs quantum dots grown on InAlGaAs lattice matched to InP

被引：20

作者：

Borgstrom, M

Pires, M

Bryllert, T

Landi, S

Seifert, W

Souza, PL

机构：

[1] Lund Univ, Dept Solid State Phys, S-22100 Lund, Sweden

[2] Pontificia Univ Catolica Rio de Janeiro, Semicond Lab, Ctr Estudos Telecomunicacones, BR-22453 Rio De Janeiro, Brazil

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 252卷 / 04期

关键词：

nanostructures; metalorganic vapor phase epitaxy; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(03)00969-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, we present InAs quantum dots prepared on an InxAlyGa1-x-yAs surface by metal organic vapor phase epitaxy. Atomic force microscopy measurements indicate that dots grown on material with higher Al content are smaller, and that the local dot densities on step-bunched facets formed on the vicinal (0 0 1) surfaces increase. We find that these dots show luminescence at very long wavelengths, lambda(room temperature) approximate to 2.1 mum, and that the emission wavelengths are blue-shifted when the Al content is increased in the layer onto which dot material is deposited. (C) 2003 Elsevier Science B.V. All rights reserved.

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页码：481 / 485

页数：5

相关论文

共 19 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] GAIN AND INTERVALENCE BAND ABSORPTION IN QUANTUM-WELL LASERS [J].

ASADA, M ;

KAMEYAMA, A ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (07) :745-753

[3] Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy [J].

Baklenov, O ;

Huffaker, DL ;

Anselm, A ;

Deppe, DG ;

Streetman, BG .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (12) :6362-6364

[4] Growth of self-assembled InAs and InAsxP1-x dots on InP by metalorganic vapour phase epitaxy [J].

Carlsson, N ;

Junno, T ;

Montelius, L ;

Pistol, ME ;

Samuelson, L ;

Seifert, W .

JOURNAL OF CRYSTAL GROWTH, 1998, 191 (03) :347-356

[5]

Fafard S, 1996, APPL PHYS LETT, V68, P991, DOI 10.1063/1.116122

[6] ULTRANARROW LUMINESCENCE LINES FROM SINGLE QUANTUM DOTS [J].

GRUNDMANN, M ;

CHRISTEN, J ;

LEDENTSOV, NN ;

BOHRER, J ;

BIMBERG, D ;

RUVIMOV, SS ;

WERNER, P ;

RICHTER, U ;

GOSELE, U ;

HEYDENREICH, J ;

USTINOV, VM ;

EGOROV, AY ;

ZHUKOV, AE ;

KOPEV, PS ;

ALFEROV, ZI .

PHYSICAL REVIEW LETTERS, 1995, 74 (20) :4043-4046

[7]

Grundmann M, 2000, PHYS E, V5, P167

[8] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS [J].

KIRSTAEDTER, N ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BIMBERG, D ;

USTINOV, VM ;

RUVIMOV, SS ;

MAXIMOV, MV ;

KOPEV, PS ;

ALFEROV, ZI ;

RICHTER, U ;

WERNER, P ;

GOSELE, U ;

HEYDENREICH, J .

ELECTRONICS LETTERS, 1994, 30 (17) :1416-1417

[9] IN-SITU FABRICATION OF SELF-ALIGNED INGAAS QUANTUM DOTS ON GAAS MULTIATOMIC STEPS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

KITAMURA, M ;

NISHIOKA, M ;

OSHINOWO, J ;

ARAKAWA, Y .

APPLIED PHYSICS LETTERS, 1995, 66 (26) :3663-3665

[10] Self-organization of steps in growth of strained films on vicinal substrates [J].

Liu, F ;

Tersoff, J ;

Lagally, MG .

PHYSICAL REVIEW LETTERS, 1998, 80 (06) :1268-1271