Quantum dot infrared photodetectors

被引：29

作者：

Liu, HC ^{[1
]}

Duboz, JY ^{[1
]}

Dudek, R ^{[1
]}

Wasilewski, ZR ^{[1
]}

Fafard, S ^{[1
]}

Finnie, P ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期

关键词：

quantum dot; infrared; photodetector;

D O I：

10.1016/S1386-9477(02)00913-X

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We discuss key issues related to quantum dot infrared photodetectors. These are the normal incidence response, the dark current, and the responsivity and detectivity. It is argued that the present devices have not fully demonstrated the potential advantages. The dominant infrared response in devices so far is polarized in the growth direction. The observed dark currents are several orders of magnitude higher than those for quantum well photodetectors; while ideally they should be lower. The areas that need improvements are pointed out. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：631 / 633

页数：3

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