Electrical transport and low-temperature scanning tunneling microscopy of microsoldered graphene

被引：41

作者：

Geringer, V. ^{[1
,2
]}

Subramaniam, D. ^{[1
,2
]}

Michel, A. K. ^{[1
,2
]}

Szafranek, B. ^{[3
]}

Schall, D. ^{[3
]}

Georgi, A. ^{[1
,2
]}

Mashoff, T. ^{[1
,2
]}

Neumaier, D. ^{[3
]}

Liebmann, M. ^{[1
,2
]}

Morgenstern, M. ^{[1
,2
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Phys B 2, D-52074 Aachen, Germany

[2] Rhein Westfal TH Aachen, JARA FIT, D-52074 Aachen, Germany

[3] AMO GmbH, AMICA, D-52074 Aachen, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 08期

关键词：

doping profiles; electron mobility; graphene; Landau levels; soldering; surface morphology; SPECTROSCOPY; SCATTERING; MOLECULES;

D O I：

10.1063/1.3334730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using the recently developed technique of microsoldering, we perform systematic transport studies of the influence of polymethylmethacrylate on graphene revealing a doping effect with a n-type dopant density Delta n of up to Delta n=3.8x10(12) cm(-2) but negligible influence on mobility and hysteresis. Moreover, we show that microsoldered graphene is free of contamination and exhibits very similar intrinsic rippling as found for lithographically contacted flakes. Characterizing the microsoldered sample by scanning tunneling spectroscopy, we demonstrate a current induced closing of the phonon gap and a B-field induced double peak attributed to the 0 Landau level.

引用

页数：3

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