Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits

被引：31

作者：

Schlünder, C

Brederlow, R

Ankele, B

Gustin, W

Goser, K

Thewes, R

机构：

[1] Infineon Technol, D-81730 Munich, Germany

[2] Infineon Technol, Villach, Austria

[3] Univ Dortmund, Dortmund, Germany

来源：

MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 01期

关键词：

D O I：

10.1016/j.microrel.2004.03.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of inhomogeneous negative bias temperature stress (NBTS) applied to p-MOS transistors under analog and RF CMOS operating conditions is investigated. Experimental data of a 0.18 and 0.25 mum standard CMOS process are presented and an analytical model is derived to physically explain the effect of stress on the device characteristics. The impact of inhomogeneous NBTS on device lifetime is considered and compared to the homogeneous case. (C) 2004 Elsevier Ltd. All rights reserved.

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收藏

页码：39 / 46

页数：8

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