Reliability and failure criteria for AlInAs/GaInAs/InP HBTs

被引：16

作者：

Kiziloglu, K ^{[1
]}

Thomas, S ^{[1
]}

Williams, F ^{[1
]}

Paine, BM ^{[1
]}

机构：

[1] Cognet Microsyst, Los Angeles, CA 90064 USA

来源：

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICIPRM.2000.850290

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have performed accelerated temperature and bias lifetests on single-heterojunction AlInAs/GaInAs/InP bipolar transistors (HBTs). Discrete HBTs were fabricated and stressed at bias conditions of high collector-emitter voltage, typical operating current (Y(CE) = 3 V and J(C) = 23 kA/cm(2)), and at junction temperatures (T(j)) of 205 degrees C and 225 degrees C. Previous lifetests had been presented at higher junction temperatures (T(j) > 230 degrees C) and up to 2000 hours of stress. In this work, we report results from stress tests up to 6000 hours. Failure criteria defined by base-emitter turn-on voltage (V(BE)) and de-gain (beta) degradation demonstrate a robust technology with activation energies (E(a)) greater than 1.1 eV and extracted median-time-to-failure (MTTF) in excess of 10(7) hours at T(j) = 100 degrees C.

引用

页码：294 / 297

页数：4

共 7 条

[1] Current induced degradation in GaAsHBT's [J].