Selectively doped high-power AlGaN/InGaN/GaN MOS-DHFET

被引：17

作者：

Adivarahan, V. ^{[1
]}

Gaevski, M. ^{[1
]}

Koudymov, A. ^{[1
]}

Yang, J. ^{[1
]}

Simin, G. ^{[1
]}

Khan, M. Asif ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 03期

关键词：

double heterostructure field-effect transistors; GaNHEMT; GaNHFET; MOS; selective doping;

D O I：

10.1109/LED.2007.891386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a novel AlGaN/InGaN/GaN metal-oxide-semiconductor double heterostructure field-effect transistor with peak drain current of 1.67 A/mm and 2-GHz RF power of 15 W/mm at a drain bias as low as 35 V. These high values of peak currents and high RF powers at relatively low drain bias resulted from an additional selective area doping of the access regions during the device fabrication. The RF-output power of 12.5 W/mm (at a drain bias of V-D = 30 V) was stable within a 0.5-dB variations during a 100-h continuous-wave stress test.

引用

页码：192 / 194

页数：3

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