Atomistic modeling of the (a plus c)-mixed dislocation core in wurtzite GaN

被引:40
作者
Belabbas, I.
Bere, A.
Chen, J.
Petit, S.
Belkhir, M. Akli
Ruterana, P.
Nouet, G.
机构
[1] Ecole Natl Super Ingenieurs Caen, UMR CNRS 6176, Lab Struct Interfaces & Fonctionnal Couches Mince, F-14050 Caen, France
[2] Inst Univ Technol Alecon, Lab Rech Proprietes Mat Nouveaux, F-61250 Damigny, France
[3] Univ Ouagadougou, Lab Phys & Chim Environm, Ouagadougou 03, Burkina Faso
关键词
D O I
10.1103/PhysRevB.75.115201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An atomistic simulation of the threading (a+c)-mixed dislocation core in wurtzite GaN has been carried out. Starting from models generated in the framework of continuum elasticity theory, two core configurations are obtained independently by using an empirical potential and a tight-binding based ab initio method. The most energetically favorable core with a 5/7-atoms ring structure is fully coordinated without wrong bonds, whereas the other with a complex double 5/6-atoms ring structure contains two rows of dangling bonds. Both core configurations introduce empty states spread over the upper half of the band gap.
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页数:10
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共 48 条
[1]   An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN [J].
Aïchoune, N ;
Potin, V ;
Ruterana, P ;
Hairie, A ;
Nouet, G ;
Paumier, E .
COMPUTATIONAL MATERIALS SCIENCE, 2000, 17 (2-4) :380-383
[2]   Atomic and electronic structure of mixed and partial dislocations in GaN [J].
Arslan, I ;
Bleloch, A ;
Stach, EA ;
Browning, ND .
PHYSICAL REVIEW LETTERS, 2005, 94 (02)
[3]   The atomic and electronic structure of dislocations in Ga-based nitride semiconductors [J].
Belabbas, I. ;
Ruterana, P. ;
Chen, J. ;
Nouet, G. .
PHILOSOPHICAL MAGAZINE, 2006, 86 (15) :2241-2269
[4]   Local electronic structure of threading screw dislocation in wurtzite GaN [J].
Belabbas, I. ;
Belkhir, M. A. ;
Lee, Y. H. ;
Chen, J. ;
Bere, A. ;
Ruterana, P. ;
Nouet, G. .
COMPUTATIONAL MATERIALS SCIENCE, 2006, 37 (03) :410-416
[5]   On the atomic structures, mobility and interactions of extended defects in GaN:: dislocations, tilt and twin boundaries [J].
Bere, A. ;
Serra, A. .
PHILOSOPHICAL MAGAZINE, 2006, 86 (15) :2159-2192
[6]   Atomic structure of dislocation cores in GaN -: art. no. 205323 [J].
Béré, A ;
Serra, A .
PHYSICAL REVIEW B, 2002, 65 (20) :1-10
[7]   The atomic configurations of the (a)over-right-arrow threading dislocation in GaN [J].
Béré, A ;
Chen, J ;
Ruterana, P ;
Serra, A ;
Nouet, G .
COMPUTATIONAL MATERIALS SCIENCE, 2002, 24 (1-2) :144-147
[8]   ATOMIC AND ELECTRONIC-STRUCTURES OF THE 90-DEGREES PARTIAL DISLOCATION IN SILICON [J].
BIGGER, JRK ;
MCINNES, DA ;
SUTTON, AP ;
PAYNE, MC ;
STICH, I ;
KINGSMITH, RD ;
BIRD, DM ;
CLARKE, LJ .
PHYSICAL REVIEW LETTERS, 1992, 69 (15) :2224-2227
[9]  
Blumenau A. T., 2003, Physica Status Solidi C, P1684, DOI 10.1002/pssc.200303126
[10]   Dislocation related photoluminescence in silicon -: art. no. 187404 [J].
Blumenau, AT ;
Jones, R ;
Öberg, S ;
Briddon, PR ;
Frauenheim, T .
PHYSICAL REVIEW LETTERS, 2001, 87 (18) :187404-1