Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs

被引：157

作者：

Kim, Kwang-Choong

Schmidt, Mathew C. ^{[1
]}

Sato, Hitoshi

Wu, Feng

Fellows, Natalie

Saito, Makoto

Fujito, Kenji

Speck, James S.

Nakamura, Shuji

DenBaars, Steven P.

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, ERATO JST, UCSB Grp, Santa Barbara, CA 93106 USA

[3] Mitsubishi Chem Corp, Optoelect Lab, Ushiku, Ibaraki 3001295, Japan

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2007年 / 1卷 / 03期

关键词：

D O I：

10.1002/pssr.200701061

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Improved mompolar m-plane (1 (1) over bar 00) light emitting diodes (LEDs) with a thick InGaN multi-quantum-well (MQW) structure have been fabrictated on low extended defect bulk m-plane GaN sucstrates using metal organic chemical vapor deposition (MOCVD). The peak wavelength of the electro-luminescence emission from the packaged LEDs was 402 nm, which is in the blue-violet region. The output power and EQE were 28 nW and 45.4%, respectively, at a pulsed driving current of 20 mA. With increasing current, the output power increased linearly, and fairly flat EQE was observed with increasing drive current. At 200 mA, the power and EQE were 250 mW and 41%, respectively. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：125 / 127

页数：3

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