Charge-transfer-based Gas Sensing Using Atomic-layer MoS2

被引:596
作者
Cho, Byungjin [1 ]
Hahm, Myung Gwan [1 ]
Choi, Minseok [2 ]
Yoon, Jongwon [3 ]
Kim, Ah Ra [1 ]
Lee, Young-Joo [1 ]
Park, Sung-Gyu [1 ]
Kwon, Jung-Dae [1 ]
Kim, Chang Su [1 ]
Song, Myungkwan [1 ]
Jeong, Yongsoo [4 ]
Nam, Kee-Seok [1 ]
Lee, Sangchul [5 ]
Yoo, Tae Jin [3 ]
Kang, Chang Goo [6 ]
Lee, Byoung Hun [3 ]
Ko, Heung Cho [3 ]
Ajayan, Pulickel M. [7 ]
Kim, Dong-Ho [1 ]
机构
[1] Korea Inst Mat Sci, Surface Technol Div, Adv Funct Thin Films Dept, Chang Won 642831, Gyeongnam, South Korea
[2] Korea Inst Mat Sci, Adv Characterizat & Anal Grp, Chang Won 642831, Gyeongnam, South Korea
[3] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
[4] Korea Inst Mat Sci, Electrochem Dept, Chang Won 642831, Gyeongnam, South Korea
[5] Stevens Inst Technol, Dept Chem Engn & Mat Sci, Hoboken, NJ 07030 USA
[6] Univ Cambridge, Cambridge Graphene Ctr, Cambridge, England
[7] Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA
基金
新加坡国家研究基金会;
关键词
MONOLAYER MOS2; THIN-LAYERS; PHOTOLUMINESCENCE; SENSORS; MOLECULES; GROWTH;
D O I
10.1038/srep08052
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
070301 [无机化学]; 070403 [天体物理学]; 070507 [自然资源与国土空间规划学]; 090105 [作物生产系统与生态工程];
摘要
Two-dimensional (2D) molybdenum disulphide (MoS2) atomic layers have a strong potential to be used as 2D electronic sensor components. However, intrinsic synthesis challenges have made this task difficult. In addition, the detection mechanisms for gas molecules are not fully understood. Here, we report a high-performance gas sensor constructed using atomic-layered MoS2 synthesised by chemical vapour deposition (CVD). A highly sensitive and selective gas sensor based on the CVD-synthesised MoS2 was developed. In situ photoluminescence characterisation revealed the charge transfer mechanism between the gas molecules and MoS2, which was validated by theoretical calculations. First-principles density functional theory calculations indicated that NO2 and NH3 molecules have negative adsorption energies (i.e., the adsorption processes are exothermic). Thus, NO2 and NH3 molecules are likely to adsorb onto the surface of the MoS2. The in situ PL characterisation of the changes in the peaks corresponding to charged trions and neutral excitons via gas adsorption processes was used to elucidate the mechanisms of charge transfer between the MoS2 and the gas molecules.
引用
收藏
页数:6
相关论文
共 34 条
[1]
SURFACE-PHONON DISPERSION OF MOS2 [J].
BERTRAND, PA .
PHYSICAL REVIEW B, 1991, 44 (11) :5745-5749
[2]
Flexible and Transparent Gas Molecule Sensor Integrated with Sensing and Heating Graphene Layers [J].
Choi, Hongkyw ;
Choi, Jin Sik ;
Kim, Jin-Soo ;
Choe, Jong-Ho ;
Chung, Kwang Hyo ;
Shin, Jin-Wook ;
Kim, Jin Tae ;
Youn, Doo-Hyeb ;
Kim, Ki-Chul ;
Lee, Jeong-Ik ;
Choi, Sung-Yool ;
Kim, Philip ;
Choi, Choon-Gi ;
Yu, Young-Jun .
SMALL, 2014, 10 (18) :3685-3691
[3]
ELECTRONIC-STRUCTURE OF MOSE2, MOS2, AND WSE2 .2. THE NATURE OF THE OPTICAL BAND-GAPS [J].
COEHOORN, R ;
HAAS, C ;
DEGROOT, RA .
PHYSICAL REVIEW B, 1987, 35 (12) :6203-6206
[4]
Origin of the n-type and p-type conductivity of MoS2 monolayers on a SiO2 substrate [J].
Dolui, Kapildeb ;
Rungger, Ivan ;
Sanvito, Stefano .
PHYSICAL REVIEW B, 2013, 87 (16)
[5]
Metal Oxide Semi-Conductor Gas Sensors in Environmental Monitoring [J].
Fine, George F. ;
Cavanagh, Leon M. ;
Afonja, Ayo ;
Binions, Russell .
SENSORS, 2010, 10 (06) :5469-5502
[6]
Few-Layer MoS2: A Promising Layered Semiconductor [J].
Ganatra, Rudren ;
Zhang, Qing .
ACS NANO, 2014, 8 (05) :4074-4099
[7]
Fabrication of Flexible MoS2 Thin-Film Transistor Arrays for Practical Gas-Sensing Applications [J].
He, Qiyuan ;
Zeng, Zhiyuan ;
Yin, Zongyou ;
Li, Hai ;
Wu, Shixin ;
Huang, Xiao ;
Zhang, Hua .
SMALL, 2012, 8 (19) :2994-2999
[8]
Hybrid functionals based on a screened Coulomb potential [J].
Heyd, J ;
Scuseria, GE ;
Ernzerhof, M .
JOURNAL OF CHEMICAL PHYSICS, 2003, 118 (18) :8207-8215
[9]
Gas Sensors Based on Semiconducting Metal Oxide One-Dimensional Nanostructures [J].
Huang, Jin ;
Wan, Qing .
SENSORS, 2009, 9 (12) :9903-9924
[10]
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides [J].
Jariwala, Deep ;
Sangwan, Vinod K. ;
Lauhon, Lincoln J. ;
Marks, Tobin J. ;
Hersam, Mark C. .
ACS NANO, 2014, 8 (02) :1102-1120