Electrical characteristics of thermally evaporated HfO2

被引：12

作者：

Garg, R ^{[1
]}

Chowdhury, NA

Bhaskaran, M

Swain, PK

Misra, D

机构：

[1] New Jersey Inst Technol, Dept Elect & Comp Engn, Newark, NJ 07102 USA

[2] Sarnoff Corp, Princeton, NJ 08543 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2004年 / 151卷 / 10期

关键词：

D O I：

10.1149/1.1784212

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The electrical characteristics of hafnium oxide (HfO2) films, grown by standard thermal evaporation of hafnium while adding oxygen at constant partial pressure during evaporation, were investigated for the first time. The dielectric constant as measured by the capacitance-voltage technique is estimated to be in the range of 18-25. Metal oxide semiconductor (MOS) capacitors using HfO2 as dielectric and annealed at 450degreesC show a hysteresis below 30 mV. A low leakage current density of <10(-7) A/cm(2) at 1 V and reduced bulk oxide charges 1.61 X 10(11)/cm(2) were also observed. The interface state density and low-temperature charge trapping behavior of these films were also investigated. Observed characteristics indicate that HfO2 films deposited by standard thermal evaporation are suitable for MOS device applications. (C) 2004 The Electrochemical Society.

引用

页码：F215 / F219

页数：5

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