Study of HfO2 films prepared by ion-assisted deposition using a gridless end-hall ion source

被引:98
作者
Gilo, M
Croitoru, N
机构
[1] ELOP Electroopt Ind Ltd, IL-76100 Rehovot, Israel
[2] Tel Aviv Univ, Fac Engn, Dept Phys Elect, IL-69978 Tel Aviv, Israel
关键词
ion assisted deposition; coatings; HfO2; atomic force microscopy;
D O I
10.1016/S0040-6090(99)00226-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
HfO2 thin films were deposited using a-beam gun evaporation with ion assisted deposition (IAD) of low energy oxygen ions (40-100 eV) from an end-Hall ion source. A comparison was made using Hf and HfO2 starting materials. The index of refraction was measured as a function of the ion source voltage and compared to results without LAD. Application to high power laser mirrors was verified by measurements of laser damage thresholds at 1.06 mu m. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:203 / 208
页数:6
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