Electrical and optical properties of ZnO thin film as a function of deposition parameters

被引：112

作者：

Jeong, WJ

Park, GC

机构：

[1] HanLyo Univ, Dept Informat & Telecommun, Kwangyang 545800, Chonnam, South Korea

[2] Mokpo Natl Univ, Dept Elect Engn, Muan 453279, Chonnam, South Korea

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 65卷 / 1-4期

关键词：

zinc oxide (ZnO); transparent conducting oxide (TCO); electrical resistivity; RF magnetron sputtering; optical transmittance;

D O I：

10.1016/S0927-0248(00)00075-1

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Al-doped zinc oxide (AZO) and undoped zinc oxide (ZO) films have been prepared by rf magnetron sputtering. Films with low resistivities were achieved by using an Al-doped ZnO target and films with higher resistivities can be obtained by introducing oxygen during deposition. An AZO thin film which was fabricated with an rf power of 180 W, a sputtering pressure of 10 mTorr and thickness of 5000 Angstrom showed the lowest resistivity of 1.4 x 10(-4) Ohm cm and transmittance of 95% in the visible range, and ZO film made by reactive sputtering with the above 10% oxygen content had the highest resistivity of 6 x 10(14) Ohm cm. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：37 / 45

页数：9

共 9 条

[1] TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].