ENERGETIC O- IONS AND O ATOMS IN PLANAR MAGNETRON SPUTTERING OF ZNO TARGET

被引：26

作者：

TOMINAGA, K

SUEYOSHI, Y

MUNFEI, C

SHINTANI, Y

机构：

[1] Department of Electrical and Electronic Engineering, The University of Tokushima, Tokushima, 770

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9B期

关键词：

REACTIVE SPUTTERING OF ZNO; ENERGETIC NEGATIVE O- IONS; TIME-OF-FLIGHT MEASUREMENT; PRODUCTION MECHANISM OF O- IONS;

D O I：

10.1143/JJAP.32.4131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Energetic negative ions and neutral atoms were observed by a time-of-flight apparatus for the sputtering of a ZnO target in Ar, Ar+O2 and O2 gases by a conventional DC planar magnetron system. Gas pressure dependence of energetic ions such as O-, O2- and neutral O atoms was measured. The relative intensity of the flux of energetic 0- ions and 0 atoms in each sputtering gas was estimated, and the production mechanism of the energetic O-ions was discussed. The 0- ions were mainly produced by the sputtering of oxygen atoms by Ar+ ions. It was also confirmed that there exists a fairly strong flux of O ions at excited states.

引用

页码：4131 / 4135

页数：5

共 8 条

[1]

CUOMO JJ, 1977, IBM J RES DEV, V21, P580, DOI 10.1147/rd.216.0580

[2] LOW RESISTIVITY INDIUM TIN OXIDE TRANSPARENT CONDUCTIVE FILMS .2. EFFECT OF SPUTTERING VOLTAGE ON ELECTRICAL PROPERTY OF FILMS [J].