Midinfrared vertical-cavity surface-emitting laser

被引：35

作者：

Felix, CL ^{[1
]}

Bewley, WW ^{[1
]}

Vurgaftman, I ^{[1
]}

Meyer, JR ^{[1
]}

Goldberg, L ^{[1
]}

Chow, DH ^{[1
]}

Selvig, E ^{[1
]}

机构：

[1] HUGHES RES LABS, MALIBU, CA 90265 USA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 24期

关键词：

D O I：

10.1063/1.120366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a type-II antimonide midinfrared vertical-cavity surface-emitting laser. The emission wavelength of 2.9 mu m is nearly independent of temperature (d lambda/dT approximate to 0.07 nm/K) and the multimode linewidth is quite narrow (3.5 nm). The pulsed threshold power at 86 K is as low as 22 mW for a 30 mu m spot. Lasing is observed up to T=280 K, and the peak output power from a 600 mu m spot exceeds 2 W up to 260 K. The differential power conversion efficiency is >1% at 220 K. (C) 1997 American Institute of Physics. [S0003-6951(97)03350-0].

引用

页码：3483 / 3485

页数：3

共 16 条

[1] ALBERT C, 1997, EUR WORKSH HELD SEPT
[2] BEWLEY WW, UNPUB APPL PHYS LETT
[3] CHOI HK, 1997, REV LASER ENG, V25, P14
[4] ROOM-TEMPERATURE PHOTOPUMPED OPERATION OF AN INGAAS-INP VERTICAL CAVITY SURFACE-EMITTING LASER
DEPPE, DG
SINGH, S
DUPUIS, RD
GERRARD, ND
ZYDZIK, GJ
VANDERZIEL, JP
GREEN, CA
PINZONE, CJ
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (22) : 2172 - 2174
[5] Interband cascade laser emitting >1 photon per injected electron
Felix, CL
Bewley, WW
Vurgaftman, I
Meyer, JR
Zhang, D
Lin, CH
Yang, RQ
Pei, SS
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (11) : 1433 - 1435
[6] SURFACE-EMITTING SEMICONDUCTOR-LASER STRUCTURES FABRICATED BY MICROLITHOGRAPHY
GOURLEY, PL
WARREN, ME
[J]. JOURNAL OF NONLINEAR OPTICAL PHYSICS & MATERIALS, 1995, 4 (01): : 27 - 81
[7] Photopumped infrared vertical-cavity surface-emitting laser
Hadji, E
Bleuse, J
Magnea, N
Pautrat, JL
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (18) : 2480 - 2482
[8] Recent advances in Sb-based midwave-infrared lasers
Hasenberg, TC
Miles, RH
Kost, AR
West, L
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (08) : 1403 - 1406
[9] LIN CH, 1997, IN PRESS APPL PHYS L, V71
[10] Type II mid-IR lasers operating above room temperature
Malin, JI
Felix, CL
Meyer, JR
Hoffman, CA
Pinto, JF
Lin, CH
Chang, PC
Murry, SJ
Pei, SS
[J]. ELECTRONICS LETTERS, 1996, 32 (17) : 1593 - 1595

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