The production and electrical characterization of free, standing cubic single, crystal Si nanoparticles

被引：3

作者：

Campbell, SA

Kortshagen, U

Bapat, A

Dong, Y

Hilchie, S

Shen, Z

机构：

[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

[2] Univ Minnesota, Dept Mech Engn, Minneapolis, MN 55455 USA

来源：

JOM | 2004年 / 56卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1007/s11837-004-0284-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reviews processes to synthesize single-crystal silicon nanoparticles in an aerosol, then deposit the particles on the wafer to characterize the materials and build de vices. By using plasma for particle formation, particle charge can be used to prevent particle agglomeration. This low-temperature process for constructing electronic devices never exposes the substrate to the very high temperature needed to form the single crystals.

引用

收藏

页码：26 / 28

页数：3

相关论文

共 43 条

[1] Synthesis of highly oriented, single-crystal silicon nanoparticles in a low-pressure, inductively coupled plasma [J].

Bapat, A ;

Perrey, CR ;

Campbell, SA ;

Carter, CB ;

Kortshagen, U .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) :1969-1974

[2] Numerical study of the effect of gas temperature on the time for onset of particle nucleation in argon-silane low-pressure plasmas [J].

Bhandarkar, U ;

Kortshagen, U ;

Girshick, SL .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (12) :1399-1408

[3] OBSERVATION OF DUST PARTICLE GROWTH AND FALLOUT IN RF-EXCITED SILANE DISCHARGES [J].

BOHME, W ;

KOHLER, WE ;

ROMHELD, M ;

VEPREK, S ;

SEEBOCK, RJ .

IEEE TRANSACTIONS ON PLASMA SCIENCE, 1994, 22 (02) :110-115

[4] Particulate formation and dusty plasma behaviour in argon-silane RF discharge [J].

Bouchoule, A. ;

Boufendi, L. .

PLASMA SOURCES SCIENCE & TECHNOLOGY, 1993, 2 (03) :204-213

[5]

BOUFENDI L, 1994, P NATO ADV RES WORKS, P262

[6] Small particle growth in silane radio-frequency discharges [J].

Childs, MA ;

Gallagher, A .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) :1076-1085

[7] ELECTROLUMINESCENCE STUDIES IN SILICON DIOXIDE FILMS CONTAINING TINY SILICON ISLANDS [J].

DIMARIA, DJ ;

KIRTLEY, JR ;

PAKULIS, EJ ;

DONG, DW ;

KUAN, TS ;

PESAVENTO, FL ;

THEIS, TN ;

CUTRO, JA ;

BRORSON, SD .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :401-416

[8] CHARGE TRANSPORT AND TRAPPING PHENOMENA IN OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS [J].

DIMARIA, DJ ;

DONG, DW ;

FALCONY, C ;

THEIS, TN ;

KIRTLEY, JR ;

TSANG, JC ;

YOUNG, DR ;

PESAVENTO, FL ;

BRORSON, SD .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5801-5827

[9] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS [J].

DIMARIA, DJ ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2722-2735

[10] Generation of nano-sized free standing single crystal silicon particles [J].

Dong, Y ;

Bapat, A ;

Hilchie, S ;

Kortshagen, U ;

Campbell, SA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04) :1923-1930

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