Raman scattering studies on ZnO doped with Ga and N (codoping), and magnetic impurities

被引：53

作者：

Hasuike, N ^{[1
]}

Fukumura, H

Harima, H

Kisoda, K

Matsui, H

Saeki, H

Tabata, H

机构：

[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Kyoto 6068585, Japan

[2] Wakayama Univ, Dept Phys, Wakayama 6408510, Japan

[3] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2004年 / 16卷 / 48期

关键词：

D O I：

10.1088/0953-8984/16/48/053

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

ZnO layers doped simultaneously with Ga and N (codoping), and magnetic elements (V, Co) were characterized by Raman scattering to study their structural stability. Five impurity modes were observed in range 200-900 cm(-1) in the doped samples, and showed characteristic variation with the doping level. It is shown that these modes can be used as a good measure of lattice defects induced by doping. The Raman spectra showed that the magnetic elements were incorporated up to 5 mol% without serious deterioration in crystallinity.

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页码：S5807 / S5810

页数：4

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