Spectral shifts associated with dark line defects in degraded II-VI laser diodes

Spectral shifts associated with [100] dark line defects of degraded II-VI laser diodes based on ZnCdSe/ZnSSe/MgZnSSe separate confinement heterostructures have been studied by spatially resolved cathodoluminescence at room temperature. Dark line defects were induced by electron-beam bombardment. Peak shifts as large as 2 nm were observed towards the blue or the red depending on the local circumstances. Peak widths usually became narrower after degradation. Redshifts and blueshifts are explained in terms of strain relaxation and Cd out-diffusion associated locally with degradation, as well as the kinetic energy dependence of the degradation-related carrier capture cross section. (C) 1998 American Institute of Physics. [S0003-6951(98)04114-X].