共 22 条
[2]
ACHARD H, 1994, SCI TECHNOLOGY ELECT
[5]
DIETZ GW, 1995, INTEGR FERROELECTR, V9, P327
[6]
Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647
[9]
Process and device technologies for 1 Gbit dynamic random-access memory cells
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1995, 13 (06)
:2329-2334
[10]
DIELECTRIC-PROPERTIES OF (BAXSR1-X)TIO3 THIN-FILMS PREPARED BY RF-SPUTTERING FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATION
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1994, 33 (9B)
:5187-5191