Analysis of reflectometers for surface anisotropy

被引:40
作者
Salvati, A [1 ]
Chiaradia, P
机构
[1] Univ Roma Tor Vergata, Dept Phys, Rome, Italy
[2] Univ Roma Tor Vergata, Ist Nazl Fis Mat, Rome, Italy
关键词
D O I
10.1364/AO.39.005820
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A succinct analysis of normal-incidence reflectometers for surface anisotropy, based on the Jones-matrix formalism, is performed. In particular, two relevant configurations with and without analyzers are compared and discussed. The latter is found to be more user friendly than the former, since most errors vanish to the first order of approximation. Therefore the optical alignment is greatly simplified. On the other hand, this configuration does not yield complete physical information. We discuss how this drawback can be circumvented in surface studies by use of the three-layer model and a Kramers-Kronig analysis. (C) 2000 Optical Society of America OCIS codes: 240.0240, 120.5700, 230.1040, 230.4110, 260.1440, 300.6470.
引用
收藏
页码:5820 / 5826
页数:7
相关论文
共 19 条
[1]   ANISOTROPIES IN THE ABOVE BAND-GAP OPTICAL-SPECTRA OF CUBIC SEMICONDUCTORS [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW LETTERS, 1985, 54 (17) :1956-1959
[2]   APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS [J].
ASPNES, DE ;
HARBISON, JP ;
STUDNA, AA ;
FLOREZ, LT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1327-1332
[3]   OPTICAL-PROPERTIES OF ALXGA1-XAS [J].
ASPNES, DE ;
KELSO, SM ;
LOGAN, RA ;
BHAT, R .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :754-767
[4]  
Azzam RM, 1989, ELLIPSOMETRY POLARIZ
[5]   PERPENDICULAR-INCIDENCE PHOTOMETRIC ELLIPSOMETRY (PIPE) OF SURFACES WITH ARBITRARY ANISOTROPY [J].
AZZAM, RMA .
JOURNAL OF OPTICS-NOUVELLE REVUE D OPTIQUE, 1981, 12 (05) :317-321
[6]   OPTICAL SPECTROSCOPY OF (110) SURFACES OF III-V SEMICONDUCTORS [J].
BERKOVITS, VL ;
KISELEV, VA ;
SAFAROV, VI .
SURFACE SCIENCE, 1989, 211 (1-3) :489-502
[7]   OPTICAL-TRANSITIONS ON GAAS [110] SURFACE [J].
BERKOVITS, VL ;
MAKARENKO, IV ;
MINASHVILI, TA ;
SAFAROV, VI .
SOLID STATE COMMUNICATIONS, 1985, 56 (05) :449-450
[8]   Origin of the optical anisotropy of GaAs (001) [J].
Berkovits, VL ;
Chiaradia, P ;
Paget, D ;
Gordeeva, AB ;
Goletti, C .
SURFACE SCIENCE, 1999, 441 (01) :26-32
[9]  
CARDONA M, 1966, J PHYS SOC JPN, VS 21, P89
[10]   Differential-reflectance spectroscopy and reflectance-anisotropy spectroscopy on semiconductor surfaces [J].
Chiaradia, P ;
Del Sole, R .
SURFACE REVIEW AND LETTERS, 1999, 6 (3-4) :517-528