Micro-irradiation experiments in MOS transistors using synchrotron radiation

被引：2

作者：

Autran, JL

Masson, P

Freud, N

Raynaud, C

Riekel, C

机构：

[1] Inst Natl Sci Appl Lyon, CNRS, UMR 5511, LPM, F-69621 Villeurbanne, France

[2] CNRS, ENSERG, UMR 5531, LPCS, F-38016 Grenoble, France

[3] Inst Natl Sci Appl Lyon, CNDRI, F-69621 Villeurbanne, France

[4] Inst Natl Sci Appl Lyon, CNRS, UPRESA 5005, CEGELY,ECPA, F-69621 Villeurbanne, France

[5] European Synchrotron Radiat Facil, F-38043 Grenoble, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 03期

关键词：

D O I：

10.1109/23.856482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spatially-resolved total-dose degradation has been performed in MOS transistors by focusing X-ray synchrotron radiation on the gate electrode with micrometer resolution. The influence of the resulting permanent degradation on device electrical properties has been analyzed using current-voltage and charge pumping measurements, in concert with optical characterization (photon emission) and quasi-breakdown measurements.

引用

收藏

页码：574 / 579

页数：6

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