Effects of growth interruption upon silicon delta layers in gallium arsenide

被引：1

作者：

Nawaz, R ^{[1
]}

Elliott, M ^{[1
]}

Woolf, DA ^{[1
]}

机构：

[1] Univ Wales, Dept Phys & Astron, Cardiff CF2 3YB, S Glam, Wales

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

关键词：

delta doping; MBE growth; transport;

D O I：

10.1016/S0169-4332(97)00553-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We describe a study of samples grown by molecular-beam epitaxy, designed to examine the limitations to silicon (Si) delta-doping of gallium arsenide (GaAs) at elevated growth temperatures. Samples (Si delta-doped to 1 x 10(13) cm(-2)) were grown at 630 degrees C, during which the growth was paused (for times between 0 and Is min) after depositing the Si. Total electron sheet densities were measured (using Hall and Shubnikov-de Haas (SdH) effect measurements) to determine the electrically active Si concentration. The free electron concentration showed a reduction from about 8 x 10(12) cm(-2) for zero pause time, to 5 x 10(12) cm(-2) for 18 min pause time. These results can be explained convincingly using simple models of impurity background in the MBE chamber or surface aggregation. Further experiments to distinguish these mechanisms are discussed. (C) 1998 Elsevier Science B.V.

引用

页码：471 / 475

页数：5

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