GROWTH OF INXGA1-XAS ON GAAS (001) BY MOLECULAR-BEAM EPITAXY

被引：63

作者：

WESTWOOD, DI

WOOLF, DA

WILLIAMS, RH

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 04期

关键词：

D O I：

10.1016/0022-0248(89)90318-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：782 / 792

页数：11

共 32 条

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