A 25-nm-long channel metal-gate p-type Schottky source/drain metal-oxide-semiconductor field effect transistor on separation-by-implanted-oxygen substrate

被引：27

作者：

Itoh, A ^{[1
]}

Saitoh, M ^{[1
]}

Asada, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 08期

关键词：

Schottky source/drain MOSFET; short channel device; SOI device; metal gate;

D O I：

10.1143/JJAP.39.4757

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 25-nm-long channel metal-gate PtSi Schottky source/drain metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on a separation-by-implanted-oxygen (SIMOX) substrate was demonstrated. The drain current and transconductance were 293 mu A/mu m and 431 mS/mm, respectively.

引用

页码：4757 / 4758

页数：2

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