ZnO nanowires grown on SOI CMOS substrate for ethanol sensing

被引:87
作者
Santra, S. [1 ]
Guha, P. K. [2 ]
Ali, S. Z. [1 ]
Hiralal, P. [1 ]
Unalan, H. E. [3 ]
Covington, J. A. [2 ]
Amaratunga, G. A. J. [1 ]
Milne, W. I. [1 ]
Gardner, J. W. [2 ]
Udrea, F. [1 ]
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England
[2] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England
[3] Middle E Tech Univ, Dept Met & Mat Engn, TR-06531 Ankara, Turkey
基金
英国工程与自然科学研究理事会;
关键词
SOI CMOS; Gas sensor; Zinc oxide nanowires; Ethanol sensor; GAS SENSORS; DOPED ZNO; NANOROD; FILMS; HYDROGEN; NO2;
D O I
10.1016/j.snb.2010.01.009
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This paper reports on the integration of zinc oxide nanowires (ZnO NWs) with a silicon on insulator (SOI) CMOS (complementary metal oxide semiconductor) micro-hotplate for use as an alcohol sensor. The micro-hotplates consist of a silicon resistive micro-heater embedded within a membrane (composed of silicon oxide and silicon nitride, supported on a silicon substrate) and gold bump bonded aluminum electrodes that are used to make an ohmic contact with the sensing material. ZnO NWs were grown by a simple, low-cost hydrothermal method and characterised using SEM, XRD and photoluminiscence methods. The chemical sensitivity of the on-chip NWs to ethanol vapour (at different humidity levels) was characterised at two different temperatures namely, 300 degrees C and 400 degrees C (power consumption was 24 mW and 33 mW, respectively), and the sensitivity was found to be 0.1%/ppm (response 4.7 at 4363 ppm). These results show that ZnO NWs are a promising material for use as a CMOS ethanol gas sensor that offers low cost, low power consumption and integrated circuitry. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:559 / 565
页数:7
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