Demonstration of an amorphous carbon tunnel diode

被引：20

作者：

Bhattacharyya, Somnath ^{[1
]}

Silva, S. Ravi P. ^{[1
]}

机构：

[1] Univ Surrey, Nanoelect Ctr, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2454512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Negative differential conductance in metal/amorphous nitrogenated carbon (a-CNx)/Si structures is demonstrated at room temperature. These metal-insulator-semiconductor tunnel diodes are fabricated by optimizing the tunnel barrier at the a-CNx/Si junction through the control of the band gap and nitrogen doping level in carbon where this a-C layer acts as a semi-insulator. A small electron tunneling effective mass of about 0.06 times the free electron mass, a coherence length of similar to 10 nm in these thin a-CNx layers and a low interface trap density suggest fast device operation similar to classical tunnel diodes. (c) 2007 American Institute of Physics.

引用

页数：3

共 23 条

[1] AMORPHOUS DIAMOND-SI SEMICONDUCTOR HETEROJUNCTIONS [J].

AMARATUNGA, GAJ ;

SEGAL, DE ;

MCKENZIE, DR .

APPLIED PHYSICS LETTERS, 1991, 59 (01) :69-71

[2] Resonant tunnelling and fast switching in amorphous-carbon quantum-well structures [J].

Bhattacharyya, S ;

Henley, SJ ;

Mendoza, E ;

Gomez-Rojas, L ;

Allam, J ;

Silva, SRP .

NATURE MATERIALS, 2006, 5 (01) :19-22

[3] ELECTRONIC-PROPERTIES OF SEMICONDUCTING DIAMOND-LIKE CARBON DIAMOND [J].

CHAN, KK ;

SILVA, SRP ;

AMARATUNGA, GAJ .

THIN SOLID FILMS, 1992, 212 (1-2) :232-239

[4] Electronic properties and doping of hydrogenated tetrahedral amorphous carbon films [J].

Conway, NMJ ;

Milne, WI ;

Robertson, J .

[5] Direct tunneling diode structure with a multilayer charge injection barrier [J].

Dons, EM ;

Skowronski, CS ;

Farmer, KR .

APPLIED PHYSICS LETTERS, 1998, 73 (25) :3712-3714

[6] Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films [J].

Gerstner, EG ;

McKenzie, DR .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) :5647-5651

[7] Electrical characterization of nanocrystalline carbon-silicon heterojunctions [J].

Hastas, NA ;

Dimitriadis, CA ;

Tassis, DH ;

Logothetidis, S .

APPLIED PHYSICS LETTERS, 2001, 79 (05) :638-640

[8] Radiative and nonradiative recombination in polymerlike α-C:H films [J].

Heitz, T ;

Godet, C ;

Bourée, JE ;

Drévillon, B ;

Conde, JP .

PHYSICAL REVIEW B, 1999, 60 (08) :6045-6052

[9] Highly photoconductive amorphous carbon nitride films prepared by cyclic nitrogen radical sputtering [J].

Katsuno, T ;

Nitta, S ;

Habuchi, H ;

Stolojan, V ;

Silva, SRP .

APPLIED PHYSICS LETTERS, 2004, 85 (14) :2803-2805

[10] LUMINESCENCE EFFICIENCY ENHANCEMENT IN LASER SOAKED HYDROGENATED AMORPHOUS-CARBON FILMS [J].

KOOS, M ;

POCSIK, I ;

TOTH, L .

APPLIED PHYSICS LETTERS, 1994, 65 (18) :2245-2247

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