Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for N-channel and P-channel MOSFET's

The properties of oxynitride gate dielectrics formed using a low-pressure, rapid thermal chemical vapor deposition (RTCVD) process with SiH4, NH3, and N2O as the reactive gases are presented, Material Analyses show an increase of uniform nitrogen and interfacial hydrogen content with increasing NH3/N2O how rate ratio, MOS capacitors with both n-type and p-type substrates and both n-channel and p-channel MOSFET's were analyzed electrically, The results show increasing fixed oxide charge and interface state density with increasing nitrogen and hydrogen content in the film. A decrease in peak transconductance and improved high-field transconductance was observed for n-channel MOSFET's, Improved resistance to hot-carrier interface state generation was also observed with increasing nitrogen concentration in the films, The results suggest that an optimal nitrogen concentration of approximately 3 at.% can be considered for further development of this technology.