Electrodeposition of PbSe epitaxial films on (111) InP

被引：19

作者：

Beaunier, L ^{[1
]}

Cachet, H ^{[1
]}

Cortès, R ^{[1
]}

Froment, M ^{[1
]}

机构：

[1] Univ Paris 06, CNRS, UPR Phys Liquides & Electrochim 15, F-75252 Paris 05, France

来源：

ELECTROCHEMISTRY COMMUNICATIONS | 2000年 / 2卷 / 07期

关键词：

epitaxial growth; reflection high-energy electron diffraction; X-ray diffraction;

D O I：

10.1016/S1388-2481(00)00071-0

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Epitaxial growth of PbSe is addressed on (111) InP single crystals by electrodeposition from aqueous solutions containing Se(IV), Pb(II) and Cd(II). The structure of the deposits is studied by reflection high-energy electron diffraction and X-ray diffraction. It is shown that an epitaxial growth is only observed in the presence of cadmium in the electrolyte. The best epitaxy is obtained for an optimal 0.5 M cadmium concentration. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：508 / 510

页数：3

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