Growth and characterization of copper nanoclusters embedded in SiC matrix

被引：7

作者：

Shin, DW

Wang, SX

Marshall, AF

Kimura, W

Dong, CL

Augustsson, A

Guo, JH

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

来源：

THIN SOLID FILMS | 2005年 / 473卷 / 02期

基金：

美国国家科学基金会;

关键词：

nanostructures; sputtering; transmission electron microscopy; X-ray photoelectron spectroscopy;

D O I：

10.1016/j.tsf.2004.07.079

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanocrystalline copper clusters embedded in silicon carbide were made by island growth during sputter deposition. The distribution and morphology of metal clusters were observed by high-resolution transmission electron microscopy. To investigate chemical bonding at the copper-silicon carbide interface, we studied the electronic states of copper and silicon using X-ray photoelectron spectroscopy (XPS). It was found that the formation of copper silicide was suppressed in this system and that small shifts in binding energy were observed for different sizes of clusters, which was different from the chemical shift for copper silicide formation. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：267 / 271

页数：5

共 17 条

[1] Study of the reaction at Cu/3C-SiC interface [J].