Comprehensive study of adsorption kinetics for hydrogen sensing with an electroless-plated Pd-InP Schottky diode

被引：51

作者：

Chen, HI ^{[1
]}

Chou, YI ^{[1
]}

Hsiung, CK ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2003年 / 92卷 / 1-2期

关键词：

adsorption kinetics; hydrogen sensing; schottky diode; electroless plating; Pd-InP;

D O I：

10.1016/S0925-4005(03)00125-4

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this work, a comprehensive adsorption model for hydrogen detection with an electroless-plated Pd-InP Schottky diode is proposed. The hydrogen adsorption reaction enthalpy (DeltaHdegrees) and entropy (DeltaSdegrees) are estimated as -44.1 kJ mol(-1) and -125.5 J mol(-1) K-1, respectively, based on the steady-state analysis. It is therefore unfavorable for hydrogen detection at high temperature. From kinetic analysis, the activation energy (E-a) for hydrogen adsorption is determined as 12.10 mol(-1), which is smaller than those obtained from Pd-GaAs and Pt-GaAs diodes. Based on these results, the hydrogen adsorption rate of Pd-semiconductor diode is strongly influenced by the nature of semiconductor substrate. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：6 / 16

页数：11

共 32 条

[1] A novel high-sensitive Pd/InP hydrogen sensor fabricated by electroless plating [J].

Chen, HI ;

Chou, YI ;

Chu, CY .

SENSORS AND ACTUATORS B-CHEMICAL, 2002, 85 (1-2) :10-18

[2]

CHEN HI, 2001, P EL SOC 200 M EL SO, V18, P630

[3] A hydrogen sensitive Pd/GaAs Schottky diode sensor [J].

Cheng, SY .

MATERIALS CHEMISTRY AND PHYSICS, 2003, 78 (02) :525-528

[4] THE H-2-O-2 REACTION ON PALLADIUM STUDIED OVER A LARGE PRESSURE RANGE - INDEPENDENCE OF THE MICROSCOPIC STICKING COEFFICIENTS ON SURFACE CONDITION [J].

DANNETUN, HM ;

SODERBERG, D ;

LUNDSTROM, I ;

PETERSSON, LG .

SURFACE SCIENCE, 1985, 152 (APR) :559-568

[5]

EFTEKHARI G, 1993, PHYS STATUS SOLIDI A, V140, P194

[6] A model of the Temkin isotherm behavior for hydrogen adsorption at Pd-SiO2 interfaces [J].

Eriksson, M ;

Lundstrom, I ;

Ekedahl, LG .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) :3143-3146

[7] Hydrogen adsorption states at the Pd/SiO2 interface and simulation of the response of a Pd metal-oxide-semiconductor hydrogen sensor [J].

Eriksson, M ;

Ekedahl, LG .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (08) :3947-3951

[8] TRENCH PD/SI METAL-OXIDE-SEMICONDUCTOR SCHOTTKY-BARRIER DIODE FOR A HIGH-SENSITIVITY HYDROGEN GAS SENSOR [J].

FANG, YK ;

HWANG, SB ;

LIN, CY ;

LEE, CC .

APPLIED PHYSICS LETTERS, 1990, 57 (25) :2686-2688

[9] Kinetic modelling of the H-2-O-2 reaction on Pd and of its influence on the hydrogen response of a hydrogen sensitive Pd metal-oxide-semiconductor device [J].

Fogelberg, J ;

Petersson, LG .

SURFACE SCIENCE, 1996, 350 (1-3) :91-102

[10] The Schottky limit and a charge neutrality level found on metal/6H-SiC interfaces [J].

Hara, S .

SURFACE SCIENCE, 2001, 494 (03) :L805-L810

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