Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy

被引：52

作者：

Akazawa, M. ^{[1
,2
]}

Matsuyama, T. ^{[1
]}

Hashizume, T. ^{[1
,2
]}

Hiroki, M. ^{[3
]}

Yamahata, S. ^{[3
]}

Shigekawa, N. ^{[3
]}

机构：

[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

[2] JST CREST, Chiyoda Ku, Tokyo 1020075, Japan

[3] NTT Corp, NTT Photon Labs, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 13期

关键词：

aluminium compounds; atomic force microscopy; binding energy; conduction bands; gallium compounds; III-V semiconductors; indium compounds; MOCVD; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; valence bands; vapour phase epitaxial growth; wide band gap semiconductors; X-ray photoelectron spectra;

D O I：

10.1063/1.3368689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The valence-band offset of a lattice-matched In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy (MOVPE) was investigated by x-ray photoelectron spectroscopy (XPS). Atomic force microscopy and angle-resolved XPS indicated that a thin In0.17Al0.83N (2.5 nm) layer was successfully grown by MOVPE on GaN. The XPS result showed that the valence band offset was 0.2 +/- 0.3 eV. This result indicates that the conduction-band offset at the In0.17Al0.83N/GaN interface is large, i.e., 0.9 to 1.0 eV, and occupies a large part of the entire band discontinuity.

引用

页数：3

共 15 条

[1] Ambacher O, 1999, PHYS STATUS SOLIDI B, V216, P381, DOI 10.1002/(SICI)1521-3951(199911)216:1<381::AID-PSSB381>3.0.CO
[2] 2-O
[3] High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures
Gonschorek, M.
Carlin, J-F.
Feltin, E.
Py, M. A.
Grandjean, N.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (06)
[4] InAlN/GaN heterostructure field-effect transistors grown by plasma-assisted molecular-beam epitaxy
Higashiwaki, M
Matsui, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (6B): : L768 - L770
[5] Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility
Hiroki, Masanobu
Maeda, Narihiko
Kobayashi, Takashi
[J]. APPLIED PHYSICS EXPRESS, 2008, 1 (11) : 1111021 - 1111023
[6] Band gap bowing parameter of In1-xAlxN
Jones, R. E.
Broesler, R.
Yu, K. M.
Ager, J. W., III
Haller, E. E.
Walukiewicz, W.
Chen, X.
Schaff, W. J.
[J]. JOURNAL OF APPLIED PHYSICS, 2008, 104 (12)
[7] Surface electronic properties of undoped InAlN alloys
King, P. D. C.
Veal, T. D.
Adikimenakis, A.
Lu, Hai
Bailey, L. R.
Iliopoulos, E.
Georgakilas, A.
Schaff, W. J.
McConville, C. F.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (17)
[8] InAIN/GaN HEMTs:: A first insight into technological optimization
Kuzmík, J
Kostopoulos, A
Konstantinidis, G
Carlin, JF
Georgakilas, A
Pogany, D
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (03) : 422 - 426
[9] Power electronics on InAlN/(In)GaN:: Prospect for a record performance
Kuzmík, J
[J]. IEEE ELECTRON DEVICE LETTERS, 2001, 22 (11) : 510 - 512
[10] Waldrop JR, 1996, APPL PHYS LETT, V68, P2879, DOI 10.1063/1.116355

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