Band gap bowing parameter of In1-xAlxN

被引：66

作者：

Jones, R. E. ^{[1
,3
]}

Broesler, R. ^{[1
,3
]}

Yu, K. M. ^{[1
]}

Ager, J. W., III ^{[1
]}

Haller, E. E. ^{[1
,3
]}

Walukiewicz, W. ^{[1
]}

Chen, X. ^{[2
]}

Schaff, W. J. ^{[2
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[2] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 12期

关键词：

absorption coefficients; aluminium compounds; channelling; conduction bands; energy gap; III-V semiconductors; indium compounds; Rutherford backscattering; semiconductor thin films; wide band gap semiconductors;

D O I：

10.1063/1.3039509

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a band gap bowing parameter for In1-xAlxN of 4.7 eV from a study of high quality and homogenous samples with x=0.017-0.60. Optical absorption data were modeled to extract the band gaps in order to consider the complications of the band structure of In-rich InAlN, including the Burstein-Moss shift, nonparabolic conduction band, and broadening of the absorption edge. The alloy compositions were accurately determined using Rutherford backscattering spectrometry and the sample quality was evaluated using x-ray diffraction and channeling-RBS.

引用

页数：6

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