Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-xInxN films grown on sapphire

被引：56

作者：

Darakchieva, V. ^{[1
]}

Beckers, M. ^{[1
]}

Xie, M. -Y. ^{[1
]}

Hultman, L. ^{[1
]}

Monemar, B. ^{[1
]}

Carlin, J. -F. ^{[2
]}

Feltin, E. ^{[2
]}

Gonschorek, M. ^{[2
]}

Grandjean, N. ^{[2
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol IFM, S-58183 Linkoping, Sweden

[2] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 10期

关键词：

D O I：

10.1063/1.2924426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lattice parameters and strain evolution in Al1-xInxN films with 0.07 <= x <= 0.22 grown on GaN-buffered sapphire substrates by metal organic vapor phase epitaxy have been studied by reciprocal space mapping. Decoupling of compositional effects on the strain determination was accomplished by measuring the In contents in the films both by Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Differences between XRD and RBS In contents are discussed in terms of compositions and biaxial strain in the films. It is suggested that strain plays an important role for the observed deviation from Vegard's rule in the case of pseudomorphic films. On the other hand, a good agreement between the In contents determined by XRD and RBS is found for Al1-xInxN films with low degree of strain or partially relaxed, suggesting applicability of Vegard's rule in the narrow compositional range around the lattice matching to GaN. (C) 2008 American Institute of Physics.

引用

页数：7

共 32 条

[1] Mixing and decomposition thermodynamics of c-Ti1-xAlxN from first-principles calculations
Alling, B.
Ruban, A. V.
Karimi, A.
Peil, O. E.
Simak, S. I.
Hultman, L.
Abrikosov, I. A.
[J]. PHYSICAL REVIEW B, 2007, 75 (04)
[2] Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films
Angerer, H
Brunner, D
Freudenberg, F
Ambacher, O
Stutzmann, M
Hopler, R
Metzger, T
Born, E
Dollinger, G
Bergmaier, A
Karsch, S
Korner, HJ
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (11) : 1504 - 1506
[3] Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
Carlin, JF
Zellweger, C
Dorsaz, J
Nicolay, S
Christmann, G
Feltin, E
Butté, R
Grandjean, N
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (11): : 2326 - 2344
[4] High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
Carlin, JF
Ilegems, M
[J]. APPLIED PHYSICS LETTERS, 2003, 83 (04) : 668 - 670
[5] High-sheet-charge-carrier-density AlInN/GaN field-effect transistors on Si(111)
Dadgar, A
Schulze, F
Bläsing, J
Diez, A
Krost, A
Neuburger, M
Kohn, E
Daumiller, I
Kunze, M
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (22) : 5400 - 5402
[6] On the lattice parameters of GaN
Darakchieva, V.
Monemar, B.
Usui, A.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (03)
[7] Strain and compositional analyses of Al-rich Al1-xInxN films grown by MOVPE:: impact on the applicability of Vegard's rule
Darakchieva, V.
Beckers, M.
Hultman, L.
Xie, M.
Monemar, B.
Carlin, J. -F.
Grandjean, N.
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1859 - +
[8] Strain-related structural and vibrational properties of thin epitaxial AlN layers
Darakchieva, V
Birch, J
Schubert, M
Paskova, T
Tungasmita, S
Wagner, G
Kasic, A
Monemar, B
[J]. PHYSICAL REVIEW B, 2004, 70 (04) : 045411 - 1
[9] Thermodynamic stability and redistribution of charges in ternary AlGaN, InGaN, and InAlN Alloys
Deǐbuk V.G.
Voznyǐ A.V.
[J]. Semiconductors, 2005, 39 (6) : 623 - 628
[10] DUBOZ JY, 2002, LOW DIMENSIONAL NITR, P46804

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