Strain and compositional analyses of Al-rich Al1-xInxN films grown by MOVPE:: impact on the applicability of Vegard's rule

被引：3

作者：

Darakchieva, V. ^{[1
]}

Beckers, M. ^{[1
]}

Hultman, L. ^{[1
]}

Xie, M. ^{[1
]}

Monemar, B. ^{[1
]}

Carlin, J. -F. ^{[1
]}

Grandjean, N. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, IFM, S-58183 Linkoping, Sweden

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期

基金：

瑞典研究理事会;

关键词：

D O I：

10.1002/pssc.200778706

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied composition and strain in Al1-xInxN films with 0.128 <= x <= 0.22 grown on GaN-buffered sapphire substrates by metalorganic vapor phase epitaxy. A good agreement between the In contents determined by Rutherford backscattering spectrometry (RBS) and Xray diffraction (XRD) is found for x <= 18, suggesting applicability of Vegard's rule in the narrow compositional range around the lattice matching to GaN. The increase of the In content up to x = 0.22 leads to a formation of sub-layers with a higher composition, accompanied by deviations from Vegard's rule.

引用

页码：1859 / +

页数：3

共 15 条

[1] Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films
Angerer, H
Brunner, D
Freudenberg, F
Ambacher, O
Stutzmann, M
Hopler, R
Metzger, T
Born, E
Dollinger, G
Bergmaier, A
Karsch, S
Korner, HJ
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (11) : 1504 - 1506
[2] High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
Carlin, JF
Ilegems, M
[J]. APPLIED PHYSICS LETTERS, 2003, 83 (04) : 668 - 670
[3] On the lattice parameters of GaN
Darakchieva, V.
Monemar, B.
Usui, A.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (03)
[4] Strain-related structural and vibrational properties of thin epitaxial AlN layers
Darakchieva, V
Birch, J
Schubert, M
Paskova, T
Tungasmita, S
Wagner, G
Kasic, A
Monemar, B
[J]. PHYSICAL REVIEW B, 2004, 70 (04) : 045411 - 1
[5] First-principles calculations of gap bowing in InxGa1-xN and InxAl1-xN alloys:: Relation to structural and thermodynamic properties -: art. no. 075213
Ferhat, M
Bechstedt, F
[J]. PHYSICAL REVIEW B, 2002, 65 (07) : 1 - 7
[6] Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range
Hums, C.
Blaesing, J.
Dadgar, A.
Diez, A.
Hempel, T.
Christen, J.
Krost, A.
Lorenz, K.
Alves, E.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (02)
[7] Vegard's law deviation in band gap and bowing parameter of AlxIn1-xN
Liou, BT
Yen, SH
Kuo, YK
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (03): : 651 - 655
[8] Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state
Lorenz, K.
Franco, N.
Alves, E.
Watson, I. M.
Martin, R. W.
O'Donnell, K. P.
[J]. PHYSICAL REVIEW LETTERS, 2006, 97 (08)
[9] VIBRATIONAL SPECTROSCOPY OF ALUMINUM NITRIDE
MCNEIL, LE
GRIMSDITCH, M
FRENCH, RH
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1993, 76 (05) : 1132 - 1136
[10] Rietveld refinement for indium nitride in the 105-295 K range
Paszkowicz, W
Cerny, R
Krukowski, S
[J]. POWDER DIFFRACTION, 2003, 18 (02) : 114 - 121

← 1 2 →