Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility

被引：28

作者：

Hiroki, Masanobu ^{[1
]}

Maeda, Narihiko ^{[1
]}

Kobayashi, Takashi ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 11期

关键词：

D O I：

10.1143/APEX.1.111102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated a novel heterostructure comprising InAlN/AlGaN/AlN/GaN by metal organic vapor phase epitaxy. Owing to the flat surface of the AlGaN underlayer, the obtained surface is flatter [root mean square (RMS) roughness of 0.27 nm] than that for the conventional InAlN/AlN/GaN heterostructure (RMS roughness of 0.53 nm). The electron mobility in the new structure is 1360 cm(2) V(-1) S(-1) with N(S) of 1.85 x 10(13) cm(-2), which is higher that in the conventional one. The insertion of the AlGaN layer into the conventional structure is effective for improving surface morphology and electron mobility. (C) 2008 The Japan Society of Applied Physics

引用

页码：1111021 / 1111023

页数：3

共 18 条

[1] Ambacher O, 1999, PHYS STATUS SOLIDI B, V216, P381, DOI 10.1002/(SICI)1521-3951(199911)216:1<381::AID-PSSB381>3.0.CO
[2] 2-O
[3] Spontaneous polarization and piezoelectric constants of III-V nitrides
Bernardini, F
Fiorentini, V
Vanderbilt, D
[J]. PHYSICAL REVIEW B, 1997, 56 (16): : 10024 - 10027
[4] THE INFLUENCE OF THE STRAIN-INDUCED ELECTRIC-FIELD ON THE CHARGE-DISTRIBUTION IN GAN-ALN-GAN STRUCTURE
BYKHOVSKI, A
GELMONT, B
SHUR, M
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (11) : 6734 - 6739
[5] High-sheet-charge-carrier-density AlInN/GaN field-effect transistors on Si(111)
Dadgar, A
Schulze, F
Bläsing, J
Diez, A
Krost, A
Neuburger, M
Kohn, E
Daumiller, I
Kunze, M
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (22) : 5400 - 5402
[6] High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures
Gonschorek, M.
Carlin, J-F.
Feltin, E.
Py, M. A.
Grandjean, N.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (06)
[7] InAlN/GaN heterostructure field-effect transistors grown by plasma-assisted molecular-beam epitaxy
Higashiwaki, M
Matsui, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (6B): : L768 - L770
[8] High-quality InAIN/GaN heterostructures grown by metal-organic vapor phase epitaxy (vol 40, pp 214, 2006)
Hiroki, M.
Yokoyama, H.
Watanabe, N.
Kobayashi, T.
[J]. SUPERLATTICES AND MICROSTRUCTURES, 2008, 44 (03) : 302 - 302
[9] Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy
Jeganathan, K.
Shimizu, M.
Okumura, H.
Yano, Y.
Akutsu, N.
[J]. JOURNAL OF CRYSTAL GROWTH, 2007, 304 (02) : 342 - 345
[10] InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics
Katz, O
Mistele, D
Meyler, B
Bahir, G
Salzman, J
[J]. ELECTRONICS LETTERS, 2004, 40 (20) : 1304 - 1305

← 1 2 →