A fully electronic sensor for the measurement of cDNA hybridization kinetics

被引：19

作者：

Bandiera, L. ^{[1
]}

Cellere, G.

Cagnin, S.

De Toni, A.

Zanoni, E.

Lanfranchi, G.

Lorenzelli, L.

机构：

[1] Univ Padua, Dept Informat Engn, I-35100 Padua, Italy

[2] Univ Padua, CRIBI Biotechnol Ctr, I-35100 Padua, Italy

[3] IRST Microsyst Div, ITC, Trento, Italy

来源：

BIOSENSORS & BIOELECTRONICS | 2007年 / 22卷 / 9-10期

关键词：

DNA sensors; silicon nitride; hybridization kinetic; dsDNA; cDNA;

D O I：

10.1016/j.bios.2006.09.025

中图分类号：

Q6 [生物物理学];

学科分类号：

071011 ;

摘要：

Ion sensitive field effect transistors (ISFET) are candidates for a new generation of fully electrical DNA sensors. To this purpose, we have modified ISFET sensors by adsorbing on their Si3N4 surface poly-L-lysine and single (as well as double) stranded DNA. Once coupled to an accurate model of the oppositely charged layers adsorbed on the surface, the proposed sensor allows quantitatively evaluating the adsorbed molecules densities, as well as estimating DNA hybridization kinetics. (c) 2006 Published by Elsevier B.V.

引用

页码：2108 / 2114

页数：7

共 31 条

[1]

Adamson A. W., 1997, Physical Chemistry of Surfaces

[2]

Bard A. J., 1980, ELECTROCHEMICAL METH

[3] Theory and application of the material work function for chemical sensors based on the field effect principle [J].