Transmission electron microscopy of NdNiO3 thin films on silicon substrates

被引：16

作者：

Laffez, P ^{[1
]}

Retoux, R

Boullay, P

Zaghrioui, M

Lacorre, P

van Tendeloo, G

机构：

[1] Univ Maine, Lab Phys Etat Condense, CNRS, UMR 6087, F-72085 Le Mans 9, France

[2] Univ Maine, Lab Fluorures, UMR 6010, F-72085 Le Mans 9, France

[3] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2000年 / 12卷 / 01期

关键词：

D O I：

10.1051/epjap:2000171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure of NdNiO3 thin films deposited on Si (100) was been investigated by high resolution electron microscopy. Deposition at 250 degreesC and 600 degreesC and several annealing at high temperature under oxygen pressure were performed. Depending on the deposition temperature and annealing conditions, different texture and microstructure were observed. Relationships between microstructure and transport properties are discussed. The differences of grain boundaries are suggested to be responsible for the difference in transport properties of the films.

引用

页码：55 / 60

页数：6

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