Electric and photoelectric properties of n-GaxIn1-xN/p-Si anisotypic heterojunctions

被引：5

作者：

Aleksandrov, SE ^{[1
]}

Zykov, VA ^{[1
]}

Gavrikova, TA ^{[1
]}

Krasovitskii, DM ^{[1
]}

机构：

[1] St Petersburg State Univ, St Petersburg 195251, Russia

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 04期

关键词：

D O I：

10.1134/1.1187407

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have developed a technology for producing n-type GaxIn1-xN/p-Si heterostructures by combined pyrolysis of indium and gallium monoammoniate chlorides, making it possible to obtain heterolayers with composition varying over wide limits (from GaN up to InN). The composition and basic electric and optical characteristics of nitride films were determined. The electric and photoelectric properties of the heterostructures with GaxIn1-xN films of different composition were investigated. It was shown that the anisotypic heterojunction n-GaxIn1-xN/p-Si is a promising photosensitive element for detecting visible-range radiation. The maximum values of the specific detectivity were D*=1.2x10(11) Hz(1/2).W-1 at 290 K. A band diagram of the heterojunction was constructed. (C) 1998 American Institute of Physics.

引用

页码：412 / 416

页数：5

共 18 条

[1]

ALEKSANDROV SE, 1987, Patent No. 1436762

[2] GROWTH OF INN FILMS ON GAAS(111) AND GAP(111) SUBSTRATES BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY [J].

GUO, QX ;

OGAWA, H ;

YAMANO, H ;

YOSHIDA, A .

APPLIED PHYSICS LETTERS, 1995, 66 (06) :715-717

[3] EVALUATION OF A NEW PLASMA SOURCE FOR MOLECULAR-BEAM EPITAXIAL-GROWTH OF INN AND GAN FILMS [J].

HOKE, WE ;

LEMONIAS, PJ ;

WEIR, DG .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :1024-1028

[4] EPITAXIAL-GROWTH OF INN BY HALOGEN TRANSPORT METHOD [J].

IGARASHI, O .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9A) :2665-2668

[5] INDIUM NITRIDE THIN-FILMS PREPARED BY RADIOFREQUENCY REACTIVE SPUTTERING [J].

MARUYAMA, T ;

MORISHITA, T .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (10) :5809-5812

[6]

MATSOKIN AM, 1990, SOV J NUMER ANAL MAT, V5, P53

[7]

MILNES AG, 1972, HETERJUNCTIONS METAL

[8] PHYSICAL-PROPERTIES OF GALLIUM INDIUM NITRIDE FILMS PREPARED BY PHOTO-ASSISTED MOVPE [J].

NAGATOMO, T ;

OMOTO, O .

JOURNAL DE PHYSIQUE IV, 1995, 5 (C5) :1173-1178

[9] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689

[10] GROWTH OF SINGLE-CRYSTAL GAN SUBSTRATE USING HYDRIDE VAPOR-PHASE EPITAXY [J].

NANIWAE, K ;

ITOH, S ;

AMANO, H ;

ITOH, K ;

HIRAMATSU, K ;

AKASAKI, I .

JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) :381-384

← 1 2 →