TEM measurement of strain in coherent quantum heterostructures

被引：10

作者：

Miller, PD ^{[1
]}

Liu, CP ^{[1
]}

Gibson, JM ^{[1
]}

机构：

[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

来源：

ULTRAMICROSCOPY | 2000年 / 84卷 / 3-4期

基金：

美国国家科学基金会;

关键词：

transmission electron microscopy; transmission electron microscopy examination of materials; strain measurement;

D O I：

10.1016/S0304-3991(00)00036-X

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

We report on a transmission electron microscopy (TEM) technique that can be used to measure strain due to individual nanometer-scale coherent heterostructures such as quantum dots or inclusions. The measurement relies on two-beam imaging and on an approximation that employs a universal model for lattice plane bending. We demonstrate that analysis is simple and accurate. Using this method, we measured the average strain in dome-shaped Ge islands grown on Si (0 0 1). We found that the method of specimen preparation can significantly affect the observed strain in these islands. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：225 / 233

页数：9

相关论文

共 31 条

[1] ELASTIC MISFIT STRESS-RELAXATION IN HIGHLY STRAINED INGAAS/GAAS STRUCTURES [J].

ANDROUSSI, Y ;

LEFEBVRE, A ;

COURBOULES, B ;

GRANDJEAN, N ;

MASSIES, J ;

BOUHACINA, T ;

AIME, JP .

APPLIED PHYSICS LETTERS, 1994, 65 (09) :1162-1164

[2]

Armigliato A, 1997, J PHYS III, V7, P2375, DOI 10.1051/jp3:1997265

[3] ON DIFFRACTION CONTRAST FROM INCLUSIONS [J].

ASHBY, MF ;

BROWN, LM .

PHILOSOPHICAL MAGAZINE, 1963, 8 (94) :1649-&

[4] Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy [J].

Benabbas, T ;

Francois, P ;

Androussi, Y ;

Lefebvre, A .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (05) :2763-2767

[5] STRAINED STATE OF GE(SI) ISLANDS ON SI - FINITE-ELEMENT CALCULATIONS AND COMPARISON TO CONVERGENT-BEAM ELECTRON-DIFFRACTION MEASUREMENTS [J].

CHRISTIANSEN, S ;

ALBRECHT, M ;

STRUNK, HP ;

MAIER, HJ .

APPLIED PHYSICS LETTERS, 1994, 64 (26) :3617-3619

[6] DIFFUSION IN STRAINED SI(GE) [J].

COWERN, NEB ;

ZALM, PC ;

VANDERSLUIS, P ;

GRAVESTEIJN, DJ ;

DEBOER, WB .

PHYSICAL REVIEW LETTERS, 1994, 72 (16) :2585-2588

[7] Theory of quantum dot formation in Stranski-Krastanov systems [J].

Dobbs, HT ;

Vvedensky, DD ;

Zangwill, A .

APPLIED SURFACE SCIENCE, 1998, 123 :646-652

[8] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[9] SiGe coherent islanding and stress relaxation in the high mobility regime [J].

Floro, JA ;

Chason, E ;

Twesten, RD ;

Hwang, RQ ;

Freund, LB .

PHYSICAL REVIEW LETTERS, 1997, 79 (20) :3946-3949

[10]

FREUND LB, 1995, Z ANGEW MATH PHYS, V46, pS185

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