Microscopic studies of radiation damage-induced defects responsible for the deterioration of high-resistivity silicon detectors

New levels are reported on fast neutron-damaged high-resistivity float zone silicon, and their contribution to the space charge in the field zone of a detector is discussed. Using TSC measurements, the hole capture at the CiOi donor level is shown to require a barrier of 35 meV to be overcome. Moreover, a bistable defect emerging during the annealing of heavily damaged samples is identified in the TSC spectrum.